Semiconductor device and method of manufacturing the same

ABSTRACT

A semiconductor device includes a stacked structure including conductive layers and insulating layers stacked alternately with each other, first semiconductor patterns passing through the stacked structure and arranged in a first direction, second semiconductor patterns passing through the stacked structure and arranged in the first direction, wherein the second semiconductor patterns are adjacent to the first semiconductor patterns in a second direction crossing the first direction, air gaps located between the first semiconductor patterns and the second semiconductor patterns and extending in the first direction, and at least one blocking pattern passing through the stacked structure and filling portions of the air gaps.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority to Korean patent applicationnumber 10-2014-0075937, filed on Jun. 20, 2014, the entire disclosure ofwhich is herein incorporated by reference in its entirety.

BACKGROUND Field of Invention

Various exemplary embodiments relate generally to a semiconductor deviceand a method of manufacturing the same and, more particularly, to asemiconductor device having a three-dimensional structure and a methodof manufacturing the same.

Non-volatile memory devices retain stored data in the absence of a powersupply. Two-dimensional memory devices, in which memory cells arefabricated in a single layer over a silicon substrate, have reachedlimits in increasing their degree of integration. Accordingly,three-dimensional non-volatile memory devices, in which memory cells arestacked in a vertical direction over a silicon substrate, have beenproposed.

A three-dimensional non-volatile memory device has a structure in whichinterlayer insulating layers and gate electrodes are stacked alternatelywith each other, and channel layers penetrate therethrough. Memory cellsmay be stacked along the channel layers. In addition, when thethree-dimensional non-volatile memory device is manufactured, aplurality of oxide layers and a plurality of nitride layers arealternately stacked, and the plurality of nitride layers are replacedwith a plurality of conductive layers, so that the stacked gateelectrodes are formed.

However, it is difficult to perform the process of replacing theplurality of nitride layers with the plurality of conductive layers. Inaddition, peripheral layers may be damaged when the nitride layers arereplaced with the conductive layers, and characteristics of the memorydevice may be deteriorated.

SUMMARY

An embodiment is directed to a semiconductor device having an Improvedmanufacturing process and Improved characteristics, and a method ofmanufacturing the same.

A semiconductor device according to an embodiment may include a stackedstructure including conductive layers and insulating layers stackedalternately with each other, first semiconductor patterns passingthrough the stacked structure and arranged in a first direction, secondsemiconductor patterns passing through the stacked structure andarranged in the first direction, wherein the second semiconductorpatterns are adjacent to the first semiconductor patterns in a seconddirection crossing the first direction, air gaps located between thefirst semiconductor patterns and the second semiconductor patterns andextending in the first direction, and at least one blocking patternpassing through the stacked structure and filling portions of the airgaps.

A semiconductor device according to an embodiment may include a firstslit insulating layer extending in a first direction, a second slitinsulating layer extending in the first direction, a semiconductorpattern provided between the first and the second slit insulatinglayers, a first stack structure including air gaps and first insulatinglayers alternately stacked on each other and provided between the firstslit insulating layer and the semiconductor pattern, a second stackstructure including conductive layers and second insulating layersalternately stacked on each other and provided between the second slitinsulating layer and the first stack structure, wherein thesemiconductor pattern passes through the second stack structure, and ablocking pattern extending from the first slit insulating layer throughthe first stack structure to the semiconductor pattern, wherein thesecond direction is different from the first direction.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are layouts illustrating the structure of asemiconductor device according to an embodiment;

FIGS. 2A and 2B are views illustrating the structure of a semiconductordevice according to an embodiment;

FIGS. 3A to 3F are cross-sectional views illustrating a method ofmanufacturing a semiconductor device according to an embodiment;

FIG. 4 is a block diagram illustrating the configuration of a memorysystem according to an embodiment;

FIG. 5 is a block diagram illustrating the configuration of a memorysystem according to an embodiment;

FIG. 6 is a block diagram illustrating the configuration of a computingsystem according to an embodiment; and

FIG. 7 is a block diagram illustrating the configuration of a computingsystem according to an embodiment.

DETAILED DESCRIPTION

Hereinafter, various exemplary embodiments will be described in detailwith reference to the accompanying drawings. In the drawings,thicknesses and lengths of components may be exaggerated for convenienceof illustration. In the following description, a detailed explanation ofrelated functions and constitutions may be omitted for simplicity andconciseness of explanation. Like reference numerals refer to likeelements throughout the specification and drawings.

FIGS. 1A and 1B are layouts illustrating the structure of asemiconductor device according to an embodiment. More specifically, FIG.1A is a layout with a conductive layer on the top, and FIG. 1B is alayout with an insulating layer on the top.

A semiconductor device according to an embodiment may include a stackedstructure in which conductive layers C and insulating layers I arestacked alternately with each other. A lower structure including asubstrate, a source layer, and a pipe gate may be located under thestacked structure. In addition, a cell region CELL and a contact regionCONTACT may be defined in the stacked structure. In the contact regionCONTACT, contact plugs may be provided and coupled to the stackedconductive layers C, respectively. For example, the contact regionCONTACT of the stacked structure may be stepped.

In addition, the semiconductor device may include semiconductor patternsSP1 and SP2, a blocking pattern 13, first slit insulating layers 11 andsecond slit insulating layers 12 each of which passes through thestacked structure. An air gap is located between the semiconductorpatterns SP1 and SP2 and extends in one direction. In the semiconductordevice including the above structure, memory strings arranged in avertical direction or in a U shape may be formed over the substrate.

The first and second slit insulating layers 11 and 12 may extend in afirst direction I-I′, perpendicular to the vertical direction, and belocated between the semiconductor patterns SP1 and SP2. In addition, thefirst and second slit insulating layers 11 and 12 may be located in thecell region CELL, or extend from the cell region CELL to the contactregion CONTACT. The first and second slit insulating layers 11 and 12may include protrusions.

The first slit insulating layers 11 may be formed in first slits SL1located at the boundary between a first memory block MB1 and a secondmemory block MB2 which are adjacent to each other so that the conductivelayers C may be separated into memory block units. According to anembodiment, sacrificial layers stacked alternately with the insulatinglayers I may be removed through second slits SL2, and the conductivelayers C may be formed in regions from which the sacrificial layers areremoved. Therefore, the first slit insulating layers 11 may be locatedin the cell region CELL or the contact region CONTACT so that the firstslit insulating layers 11 may be used as a support body supporting theremaining insulating layers I after the sacrificial layers are removed.In addition, the second slit insulating layers 12 may be formed in thesecond slits SL2. The first and second slit insulating layers 11 and 12may be deep enough to pass through all the stacked conductive layers C.

The semiconductor patterns SP1 and SP2 may be located in the cell regionCELL and be channel layers of the memory strings. In addition, some ofthe semiconductor patterns SP1 and SP2 which are adjacent to the contactregion CONTACT may be dummy channel layers. Therefore, some of thesemiconductor patterns SP1 and SP2 may be first and second dummysemiconductor patterns SP1_D and SP2_D which function as dummy channellayers.

In addition, the semiconductor patterns SP1 and SP2 may be arranged in afirst direction I-I′ and a second direction II-II′ crossing the firstdirection I-I′. The first semiconductor patterns SP1 located on a leftside of the first slit insulating layer 11 may be aligned with eachother in the first direction I-I′. The second semiconductor patterns SP2located on a right side of the first slit insulating layer 11 may bealigned with each other in the first direction I-I′. In addition, thefirst semiconductor pattern SP1 and the second semiconductor pattern SP2which are adjacent to each other in the second direction II-II′ may beoffset from each other. For example, the first semiconductor pattern SP1and the second semiconductor pattern SP2 may be arranged in a staggeredmanner.

A distance W1 between neighboring first semiconductor patterns SP1 inthe first direction I-I′ may be smaller than a distance W2 between thefirst semiconductor patterns SP1 and the first slit insulating layer 11adjacent to each other. In addition, a distance W3 between neighboringsecond semiconductor patterns SP2 in the first direction I-I′ may besmaller than a distance W4 between the second semiconductor patterns SP2and the first slit insulating layer 11 adjacent to each other.

Referring to FIG. 1A, the air gap AG may be located between the firstsemiconductor patterns SP1 and the first slit insulating layer 11 andbetween the second semiconductor patterns SP2 and the first slitinsulating layer 11. According to an embodiment, the conductive layer Cmay be formed by depositing a conductive material through the secondslit SL2. Since the distance W1 between the first semiconductor patternsSP1 is smaller than the distance W2, the conductive material may befilled between the first semiconductor patterns SP1 before theconductive layer C is filled between the first semiconductor patternsSP1 and the first slit insulating layer 11. Therefore, the air gap AGremains in the conductive layers C. On the other hand, referring to FIG.1B, the air gap AG may not be present in the insulating layer I.Therefore, the air gap AG may be interposed between the stackedinsulating layers I, and the upper air gap AG and the lower air gap AGmay be separated from each other by the insulating layer I.

The blocking pattern 13 may be formed to seal the air gap AG located inthe cell region CELL, and include an insulating material or asemiconductor material. During the manufacturing process, an etchant maybe used. The etchant may flow unintentionally into the cell region CELLthrough the air gap AG and damage neighboring layers (see arrow).Therefore, the blocking pattern 13 may be formed to fill the air gap AGso that the blocking pattern 13 may block the etchant from moving intothe cell region CELL, in which the channel layers are located, throughthe air gap AG.

For example, in order to completely block a path of the etchant, theblocking pattern 13 may be formed to fill the air gap AG and directlycontact the semiconductor patterns SP1 and SP2. In addition, thesemiconductor patterns SP1_D and SP2_D located near the boundary betweenthe cell region CELL and the contact region CONTACT, into which theetchant is likely to be introduced, may function as dummy channellayers. The dummy channel layers and the blocking pattern 13 maydirectly contact each other. Therefore, real channel layers may beprevented from being exposed to the etchant flowing through the air gapAG.

In addition, the blocking pattern 13 may contact the first slitinsulating layer 11. For example, the blocking pattern 13 may include aninsulating material and be connected to the first slit insulating layer11. The blocking pattern 13 and the first slit insulating layer 11 maybe integrated into a single body. For example, the first blockingpattern 13A contacting the first dummy semiconductor pattern SP1_D maybe connected to the left side of the first slit insulating layer 11, andthe second blocking pattern 13B contacting the second dummysemiconductor pattern SP2_D may be connected to the right side of thefirst slit insulating layer 11. Put differently, the first and thesecond blocking patterns 13A and 13B may extend from the first slitinsulating layer 11. In addition, the first blocking pattern 13A and thesecond blocking pattern 13B may be configured either symmetrically orasymmetrically with respect to the first slit insulating layer 12.Though not shown in FIGS. 1A and 18B, sidewalls of the semiconductorpatterns SP1 and SP2 may be surrounded by a multilayer dielectric layer.Likewise, sidewalls of the first dummy semiconductor pattern SP1_D andthe second dummy semiconductor pattern SP2_D may be surrounded by themultilayer dielectric layer. The multilayer dielectric layer is denotedby reference numeral 33 in FIG. 3A. The multilayer dielectric layer mayinclude a tunnel insulating layer, a data storage layer, a chargeblocking layer, or a combination thereof. In addition, the data storagelayer may include silicon, nitride, nanodots, phase-change material, ora combination thereof. The second blocking pattern 13B may pass throughthe multilayer dielectric layer and directly contact the first andsecond dummy semiconductor patterns SP1_D and SP_2. In other words, themultilayer dielectric layer may not be interposed between the firstdummy semiconductor pattern SP1_D and the second blocking pattern 13Band between the second dummy pattern SP2_D and the second blockingpattern 13B.

FIGS. 2A and 2B are views illustrating the structure of a semiconductordevice according to an embodiment. More specifically, FIG. 2A is alayout showing a conductive layer on the top, and FIG. 2B is a layoutshowing an insulating layer on the top. Hereinafter, a description ofcommon contents with FIGS. 1A and 1B is omitted.

A semiconductor device according to an embodiment may include a stackedstructure in which the conductive layers C and the insulating layers Iare stacked alternately with each other. In addition, the semiconductorpatterns SP1 and SP2, a blocking pattern 23, and a second slitinsulating layer 21 may pass through the stacked structure.

Referring to FIGS. 2A and 2B, the distance W1 between the neighboringfirst semiconductor patterns SP1 in the first direction I-I′ may besmaller than the distance W3 between the first semiconductor pattern SP1and the second semiconductor pattern SP2 adjacent to each other in thesecond direction II-II′. In addition, the distance W2 between theneighboring second semiconductor patterns SP2 in the first directionI-I′ may be smaller than the distance W3 between the first semiconductorpattern SP1 and the second semiconductor pattern SP2 adjacent to eachother in the second direction II-II′. Therefore, when the conductivelayer C is formed through the second slit SL2, a conductive material mayfill between the neighboring first semiconductor patterns SP1 in thefirst direction I-I′ and between the neighboring second semiconductorpatterns SP2 in the first direction I-I′. However, the conductivematerial may not fully fill between the first semiconductor pattern SP1and the second semiconductor pattern SP2 adjacent to each other in thesecond direction II-II′. In other words, the air gap AG may still remainuntil after the conductive material fully fills between the neighboringfirst semiconductor patterns SP1 in the first direction I-I′ and fullyfills between the neighboring second semiconductor patterns SP2 in thefirst direction I-I′ and between.

The blocking pattern 23 may be formed to partially fill the air gap AGin order to block a path (see arrow) through which an etchant flows intothe cell region CELL. For example, the blocking pattern 23 may havevarious shapes such as a circle, an oval, or a polygon, and traverse theair gap AG. The blocking pattern 23 may contact the neighboring firstand second dummy semiconductor patterns SP1_D and SP2_D which arearranged in the second direction II-II′. In addition, the blockingpattern 23 may contact two of the first dummy semiconductor patternsSP1_D and two of the second semiconductor patterns SP2_D in order tocompletely seal the air gap AG.

FIGS. 3A to 3F are cross-sectional views illustrating a method ofmanufacturing a semiconductor device according to an embodiment. FIGS.3A, 3B, and 3D to 3F are cross-sectional views taken along line A-A′ ofFIG. 1A. FIG. 3C is a cross-sectional view taken along line B-B′ of FIG.1A.

As illustrated in FIG. 3A, sacrificial layers 31 and insulating layers32 may be formed alternately with each other. The sacrificial layers 31may include a material having a high etch selectivity with respect tothe insulating layers 32. For example, the sacrificial layer 31 mayinclude a nitride, and the insulating layer 32 may include an oxide.

Subsequently, holes H may be formed through the sacrificial layers 31and the insulating layers 32, and multilayer dielectric layers 33 andsemiconductor patterns 34 may be formed in the holes H. In anembodiment, some or all of the semiconductor patterns 34 may include aninsulating layer in a center portion.

In addition, the semiconductor patterns 34 may be arranged in the firstdirection I-I′ and the second direction II-II′. The distance W1 betweenneighboring semiconductor patterns 34 arranged in the first directionI-I′ may be smaller than that between neighboring semiconductor patterns34 arranged in the second direction II-II′ (see FIGS. 1A and 2A).

As illustrated in FIGS. 3B and 3C, at least one first opening OP1 may beformed through the first and second material layers 31 and 32. The firstopening OP1 may be located between neighboring semiconductor patterns 34in the second direction II-II′. Subsequently, a blocking pattern 35 maybe formed in the first opening OP1. For example, when the first openingOP1 is formed, the neighboring semiconductor patterns 34 in the seconddirection II-II′ and the multilayer dielectric layers 33 surrounding thesemiconductor patterns 34 may be partially etched, so that thesemiconductor patterns 34 may be exposed through the first opening OP1.Therefore, the blocking pattern 35 may directly contact the neighboringsemiconductor patterns 34 in the second direction II-II′.

When the first opening OP1 is formed, the first slit SL1 may also beformed (see FIG. 1A). The first slit SL1 may be located between theneighboring semiconductor patterns 34 in the second direction II-II′.The first slit SL1 may have a line shape extending in the firstdirection I-I′. The first opening OP1 and the first slit SL1 may beconnected to each other. The first opening OP1 may be filled with ablocking pattern 35. The first slit SL1 may be filled with a first slitinsulating layer 30. The blocking pattern 35 and the first slitinsulating layer 30 may be connected to form a single insulating layer.

The first opening OP1 may also be formed when the holes H are formed. Inthis case, the semiconductor patterns 34 and the blocking pattern 35 mayinclude the same material.

Subsequently, the second slit SL2 may be formed through the first andsecond material layers 31 and 32 and located between the semiconductorpatterns 34. The second slit SL2 may be deep enough to expose thesacrificial layers 31. Subsequently, the sacrificial layers 31 may beremoved through the second slit SL2 to form second openings OP2.

Subsequently, first barrier layers 36 and protective layers 37 may beformed in liner patterns along sidewalls of the second openings OP2 andthe second slit SL2. For example, the first barrier layers 36 mayinclude titanium, titanium nitride, tantalum, tantalum nitride, or acombination thereof. The protective layers 37 may include oxide,nitride, silicon oxide, silicon nitride, polysilicon, germanium, silicongermanium, or a combination thereof.

For example, a deposition gas may be introduced through the second slitSL2 so that the first barrier layer 36 and the protective layer 37 maybe deposited over the sidewall of the second openings OP2 and over thesidewall of the second slit SL2. The distance between the neighboringsemiconductor patterns 34 in the first direction I-I′ may be smallerthan the distance between the neighboring semiconductor patterns 34 inthe second direction II-II′. Therefore, the first barrier layer 36 andthe protective layer 37 may completely fill gaps between the neighboringsemiconductor patterns 34 in the first direction I-I′ before the firstbarrier layer 36 and the protective layer 37 sufficiently fill spacesbetween the neighboring semiconductor patterns 34 in the seconddirection II-II′. Therefore, as illustrated in FIG. 3C, the air gap AGmay remain between the neighboring semiconductor patterns 34 in thesecond direction II-II′. The air gaps AG may be located between thefirst slit insulating layer 30 and the semiconductor patterns 34. Theair gaps AG may be sandwiched between an upper insulating layer 32 and alower insulating layer 32.

As illustrated in FIG. 3D, the first barrier layer 36 formed in thesecond slit SL2 may be exposed by partially removing the protectivelayer 37 formed over a sidewall of the second slit SL2. Subsequently, asillustrated in FIG. 3E, the first barrier layer 36 and the protectivelayer 37 may be subject to a recess etching, resulting into firstbarrier patterns 36A and protective patterns 37A. For example, the firstbarrier patterns 36A may be formed by etching the first barrier layer 36by using the protective layer 37 as an etch barrier. Subsequently, theprotective patterns 37A may be formed by etching the protective layer 37by using the first barrier patterns 36A as an etch barrier. As a result,portions of the second openings OP2 adjacent to the second slit SL2 maybe re-opened, and the first barrier patterns 36A and the protectivepattern 37A may be formed in the second openings OP2 in a recessedmanner. A step may be formed between a stack of the first barrierpatterns 36A and the protective pattern 37A, which is recessed in thesecond openings OP2, and the sidewall of the second slit SL2.

An etchant for etching the protective layer 37 may flow from a boundarybetween the cell region CELL and the contact region CONTACT to the cellregion CELL through the air gap AG. The etchant flowing into the air gapAG may move along the air gap AG toward the cell region CELL and damagethe multilayer dielectric layer 33, the semiconductor pattern 34, andthe first barrier pattern 36A which are already formed in the cellregion CELL. However, according to an embodiment, since the air gap AGof the cell region CELL is sealed by the blocking pattern 35, theetchant may be prevented from moving to the cell region CELL anddamaging the layers formed in the cell region.

As illustrated in FIG. 3F, second barrier layers 38 and metal layers 39may be formed in the re-opened second openings OP2. The first barrierpatterns 36A, the protective pattern 37A, the second barrier layers 38,and the metal layers 39 collectively form conductive layers C.Subsequently, second slit insulating layers 40 may be formed in thesecond slits SL2.

According to the above-described processes, when the sacrificial layers31 are replaced by the conductive layers C, the conductive layers C maybe formed by filling different materials by taking into considerationthe distance from the second slit SL2. More specifically, the firstbarrier patterns 36A and the protective patterns 37A may be formed in aregion relatively distant from the second slit SL2, and the secondbarrier layers 38 and the metal layers 39 may be formed in a regionrelatively close to the second slit SL2. Therefore, gas used to formmetal may be prevented from remaining in the conductive layer C. Inaddition, even when the air gap AG remains during the process of formingthe conductive layer C, the air gap AG may be sealed by the blockingpattern 35 and layers existing in the cell region CELL may be protectedfrom being damaged by an etchant flowing through the air gap AG.

FIGS. 2A and 2B show another embodiment. Unlike the embodiment shown inFIGS. 1A and 1B, the processes of forming the first slit SL1 and thefirst slit insulating layer 30 may be skipped. The distance between theneighboring semiconductor patterns 34 in the first direction I-I′ may besmaller than the distance between the neighboring semiconductor patterns34 in the second direction II-II′. In addition, the blocking pattern 35may contact four neighboring semiconductor patterns 34 in the firstdirection I-I′ and the second direction II-II′. The air gap AG may beformed between the neighboring semiconductor patterns 34 in the seconddirection II-II′.

FIG. 4 is a block diagram illustrating a memory system according to anembodiment.

As illustrated in FIG. 4, a memory system 1000 according to anembodiment may include a memory device 1200 and a controller 1100.

The memory device 1200 may be used to store various types of data suchas text, graphic, and software code. The memory device 1200 may be anon-volatile memory and include the structure described above and shownin FIGS. 1A to 3F. The memory device 1200 may include a stackedstructure including conductive layers and insulating layers stackedalternately with each other, first semiconductor patterns passingthrough the stacked structure and arranged in a first direction, secondsemiconductor patterns adjacent to the first semiconductor patterns in asecond direction crossing the first direction and arranged in the firstdirection, air gaps located between the first semiconductor patterns andthe second semiconductor patterns and extending in the first direction,and at least one blocking pattern passing through the stacked structureand filling portions of the air gaps. Since the memory device 1200 isconfigured and manufactured in the above-described manner, a detaileddescription thereof will be omitted.

The controller 1100 may be coupled to a host and the memory device 1200,and may access the memory device 1200 in response to a request from thehost. For example, the controller 1100 may control read, write, eraseand background operations of the memory device 1200.

The controller 1100 may include a random access memory (RAM) 1110, acentral processing unit (CPU) 1120, a host interface 1130, an errorcorrection code (ECC) circuit 1140 and a memory interface 1150.

The RAM 1110 may function as an operation memory of the CPU 1120, acache memory between the memory device 1200 and the host, and a buffermemory between the memory device 1200 and the host. The RAM 1110 may bereplaced by a static random access memory (SRAM) or a read only memory(ROM).

The CPU 1120 may be configured to control the general operation of thecontroller 1100. For example, the CPU 1120 may be configured to operatefirmware such as a flash translation layer (FTL) stored in the RAM 110.

The host interface 1130 may interface with the host. For example, thecontroller 1100 may communicate with the host through various interfaceprotocols including a Universal Serial Bus (USB) protocol, a multimediacard (MMC) protocol, a peripheral component interconnection (PCI)protocol, a PCI-express (PCI-E) protocol, an Advanced TechnologyAttachment (ATA) protocol, a Serial-ATA protocol, a Parallel-ATAprotocol, a small computer small interface (SCSI) protocol, an enhancedsmall disk interface (ESDI) protocol, an Integrated Drive Electronics(IDE) protocol, a private protocol, or a combination thereof.

The ECC circuit 1140 may detect and correct errors included in data,which is read from the memory device 1200, by using error correctioncodes (ECCs).

The memory interface 1150 may interface with the memory device 1200. Forexample, the memory interface 1150 may include a NAND interface or a NORinterface.

For example, the controller 1100 may further include a buffer memory(not illustrated) configured to temporarily store data. The buffermemory may temporarily store data externally transferred through thehost interface 1130, or temporarily store data transferred from thememory device 1200 through the memory interface 1150. The controller1100 may further include ROM storing code data to interface with thehost.

Since the memory system 1000 according to an embodiment includes thememory device 1200 having improved structural stability, simplifiedmanufacturing processes and improved degree of integration, stabilityand degree of integration of the memory system 1000 may also beimproved.

FIG. 5 is a block diagram illustrating a memory system according to anembodiment. Hereinafter, descriptions of components already mentionedabove are omitted.

As illustrated in FIG. 5, a memory system 1000′ according to anembodiment may include a memory device 1200′ and the controller 1100.The controller 1100 may include the RAM 1110, the CPU 1120, the hostinterface 1130, the ECC circuit 1140 and the memory interface 1150.

The memory device 1200′ may be a non-volatile memory device. The memorydevice 1200′ may include the memory strings described above withreference to FIGS. 1A to 3F. The memory device 1200′ may include astacked structure including conductive layers and insulating layersstacked alternately with each other, first semiconductor patternspassing through the stacked structure and arranged in a first direction,second semiconductor patterns adjacent to the first semiconductorpatterns in a second direction crossing the first direction and arrangedin the first direction, air gaps located between the first semiconductorpatterns and the second semiconductor patterns and extending in thefirst direction, and at least one blocking pattern passing through thestacked structure and filling a portion of the air gaps. Since thememory device 1200′ is configured similar to the memory device 1200 andcan be manufactured in a similar method as the above-describedmanufacturing method employed for the memory device 1200, a detaileddescription thereof will be omitted.

The memory device 1200′ may be a multi-chip package composed of aplurality of memory chips. The plurality of memory chips may be dividedinto a plurality of groups. The plurality of groups may communicate withthe controller 1100 through first to k-th channels CH1 to CHk. Inaddition, memory chips, included in a single group, may be suitable forcommunicating with the controller 1100 through a common channel. Thememory system 1000′ may be modified so that a single memory chip may becoupled to a single channel.

As described above, according to an embodiment, since the memory system1000′ includes the memory device 1200′ having improved structuralstability, simplified manufacturing processes and increased degree ofintegration, stability and degree of integration of the memory system1000′ may also be improved. In addition, since the memory device 1200′is formed using a multi-chip package, data storage capacity and drivingspeed of the memory system 1000′ may be further increased.

FIG. 6 is a block diagram illustrating a computing system according toan embodiment. Hereinafter, descriptions of components already mentionedabove are omitted.

As illustrated in FIG. 6, a computing system 2000 according to anembodiment may include a memory device 2100, a CPU 2200, a random-accessmemory (RAM) 2300, a user interface 2400, a power supply 2500 and asystem bus 2600.

The memory device 2100 may store data, which is input through the userinterface 2400, and data, which is processed by the CPU 2200. The memorydevice 2100 may be electrically coupled to the CPU 2200, the RAM 2300,the user interface 2400, and the power supply 2500. For example, thememory device 2100 may be coupled to the system bus 2600 through acontroller (not illustrated) or be directly coupled to the system bus2600. When the memory device 2100 is directly coupled to the system bus2600, functions of the controller may be performed by the CPU 2200 andthe RAM 2300.

The memory device 2100 may be a non-volatile memory. The memory device2100 may be the semiconductor memory strings described above withreference to FIGS. 1A to 3F. The memory device 2100 may include astacked structure including conductive layers and insulating layersstacked alternately with each other, first semiconductor patternspassing through the stacked structure and arranged in a first direction,second semiconductor patterns adjacent to the first semiconductorpatterns in a second direction crossing the first direction and arrangedin the first direction, air gaps located between the first semiconductorpatterns and the second semiconductor patterns and extending in thefirst direction, and at least one blocking pattern passing through thestacked structure and filling a portion of the air gaps. Since thememory device 2100 is configured and manufactured in the same manner asthe memory devices 1200 or 1200′, a detailed description thereof will beomitted.

In addition, as described above with reference to FIG. 5, the memorydevice 2100 may be a multi-chip package composed of a plurality ofmemory chips.

The computing system 2000 having the above-described configuration maybe one of various components of an electronic device, such as acomputer, an ultra-mobile PC (UMPC), a workstation, a net-book, personaldigital assistants (PDAs), a portable computer, a web tablet, a wirelessphone, a mobile phone, a smart phone, an e-book, a portable multimediaplayer (PMP), a portable game machine, a navigation device, a black box,a digital camera, a three-dimensional (3D) television, a digital audiorecorder, a digital audio player, a digital picture recorder, a digitalpicture player, a digital video recorder, a digital video player, adevice for transmitting/receiving information in wireless environments,one of various electronic devices for home networks, one of variouselectronic devices for computer networks, one of various electronicdevices for telematics networks, an RFID device, and/or one of variousdevices for computing systems, etc.

As described above, since the computing system 2000 according to anembodiment includes the memory device 2100 having improved structuralstability, simplified manufacturing processes, and increased degree ofintegration, stability and data storage capacity of the computing system2000 may be improved.

FIG. 7 is a block diagram illustrating a computing system according toan embodiment.

As illustrated in FIG. 7, a computing system 3000 according to anembodiment may include a software layer that has an operating system3200, an application 3100, a file system 3300, and a translation layer3400. The computing system 3000 may include a hardware layer such as amemory system 3500.

The operating system 3200 manages software and hardware resources of thecomputing system 3000. The operating system 3200 may control programexecution of a central processing unit. The application 3100 may includevarious application programs executed by the computing system 3000. Theapplication 3100 may be a utility executed by the operating system 3200.

The file system 3300 may refer to a logical structure configured tomanage data and files present in the computing system 3000. The filesystem 3300 may organize files or data and store them in the memorydevice 3500 according to given rules. The file system 3300 may bedetermined depending on the operating system 3200 that is used in thecomputing system 3000. For example, when the operating system 3200 is aMicrosoft Windows-based system, the file system 3300 may be a fileallocation table (FAT) or an NT file system (NTFS). In addition, whenthe operating system 3200 is a Unix/Linux-based system, the file system3300 may be an extended file system (EXT), a Unix file system (UFS) or ajournaling file system (JFS).

FIG. 7 illustrates the operating system 3200, the application 3100, andthe file system 3300 in separate blocks. However, the application 3100and the file system 3300 may be included in the operating system 3200.

The translation layer 3400 may translate an address suitable for thememory device 3500 in response to a request from the file system 3300.For example, the translation layer 3400 may translate a logic address,generated by the file system 3300, into a physical address of the memorydevice 3500. Mapping information of the logic address and the physicaladdress may be stored in an address translation table. For example, thetranslation layer 3400 may be a flash translation layer (FTL), auniversal flash storage link layer (ULL), or the like.

The memory device 3500 may be a non-volatile memory. The memory device3500 may be the semiconductor memory device described above and shown inFIGS. 1A to 3F. The memory device 3500 may include a stacked structureincluding conductive layers and insulating layers stacked alternatelywith each other, first semiconductor patterns passing through thestacked structure and arranged in a first direction, secondsemiconductor patterns adjacent to the first semiconductor patterns in asecond direction crossing the first direction and arranged in the firstdirection, air gaps located between the first semiconductor patterns andthe second semiconductor patterns and extending in the first direction,and at least one blocking pattern passing through the stacked structureand filling a portion of the air gaps. Since the memory device 3500 isconfigured and manufactured the same as the memory devices 1200, 1200′or 2100, a detailed description thereof will be omitted.

The computing system 3000 having the above-described configuration maybe divided into an operating system layer that is operated in an upperlayer region and a controller layer that is operated in a lower levelregion. The application 3100, the operating system 3200, and the filesystem 3300 may be included in the operating system layer and driven byan operation memory. The translation layer 3400 may be included in theoperating system layer or the controller layer.

As described above, since the computing system 3000 according to anembodiment includes the memory device 3500 having improved structuralstability, simplified manufacturing processes, and increased degree ofintegration, so that stability and data storage capacity of thecomputing system 2000 may be improved.

According to an embodiment, when a semiconductor device having athree-dimensional structure is manufactured, it may be easier to replacesacrificial layers with conductive layers. In addition, the layers inthe cell region may be prevented from being damaged when the sacrificiallayers are replaced by the conductive layers, and deterioration ofcharacteristics of a memory device may be prevented.

What is claimed is:
 1. A semiconductor device, comprising: a stackedstructure including conductive layers and insulating layers stackedalternately with each other; first semiconductor patterns passingthrough the stacked structure and arranged in a first direction; secondsemiconductor patterns passing through the stacked structure andarranged in the first direction, wherein the second semiconductorpatterns are adjacent to the first semiconductor patterns in a seconddirection crossing the first direction; air gaps located between thefirst semiconductor patterns and the second semiconductor patterns andextending in the first direction; and at least one blocking patternpassing through the stacked structure and filling at least portions ofthe air gaps.
 2. The semiconductor device of claim 1, wherein theblocking pattern contacts at least one of the first and secondsemiconductor patterns.
 3. The semiconductor device of claim 2, whereinthe first and second semiconductor patterns include a channel layer anda dummy channel layer, and wherein the blocking pattern contacts thedummy channel layer.
 4. The semiconductor device of claim 1, furthercomprising: a slit insulating layer located between the firstsemiconductor patterns and the second semiconductor patterns, contactingthe blocking pattern, and extending in the first direction.
 5. Thesemiconductor device of claim 4, wherein a first distance between thefirst semiconductor patterns adjacent to each other in the firstdirection is smaller than a second distance between the firstsemiconductor patterns and the slit insulating layer, and wherein athird distance between the second semiconductor patterns adjacent toeach other in the first direction is smaller than a fourth distancebetween the second semiconductor patterns and the slit insulating layer.6. The semiconductor device of claim 4, wherein the air gaps are locatedbetween the first semiconductor patterns and the slit insulating layerand between the second semiconductor patterns and the slit insulatinglayer.
 7. The semiconductor device of claim 4, wherein the firstsemiconductor patterns are located in a first memory block, wherein thesecond semiconductor patterns are located in a second memory block, andwherein the slit insulating layer is located at a boundary between thefirst memory block and the second memory block.
 8. The semiconductordevice of claim 4, wherein the blocking pattern contacts the slitinsulating layer and at least one of the first semiconductor patterns orcontacts the slit insulating layer and at least one of the secondsemiconductor patterns, and wherein the slit insulating layer isprovided between the first and the second semiconductor patterns.
 9. Thesemiconductor device of claim 1, wherein a first distance between thefirst semiconductor patterns adjacent to each other in the firstdirection is smaller than a third distance between the first and secondsemiconductor patterns adjacent to each other in the second direction,and wherein a second distance between the second semiconductor patternsadjacent to each other in the first direction is smaller than the thirddistance.
 10. The semiconductor device of claim 9, wherein the blockingpattern contacts the first and second semiconductor patterns which areadjacent to each other in the second direction.
 11. The semiconductordevice of claim 1, wherein the blocking pattern includes an insulatingmaterial or a semiconductor material.
 12. The semiconductor device ofclaim 1, wherein the air gaps are formed between the insulating layersof the stacked structure.
 13. The semiconductor device of claim 12,wherein the air gaps are located at the same level as the conductivelayers.
 14. The semiconductor device of claim 1, further comprising:multilayer dielectric layers surrounding the first and secondsemiconductor patterns, wherein the blocking pattern passes through themultilayer dielectric layers and contacts at least one of the first andsecond semiconductor patterns.
 15. A semiconductor device, comprising: afirst slit insulating layer extending in a first direction; a secondslit insulating layer extending in the first direction; a semiconductorpattern provided between the first and the second slit insulatinglayers, a first stack structure including air gaps and first insulatinglayers alternately stacked on each other and provided between the firstslit insulating layer and the semiconductor pattern; a second stackstructure including conductive layers and second insulating layersalternately stacked on each other and provided between the second slitinsulating layer and the first stack structure, wherein thesemiconductor pattern passes through the second stack structure; and ablocking pattern extending from the first slit insulating layer throughthe first stack structure to the semiconductor pattern, wherein thesecond direction is different from the first direction.
 16. Thesemiconductor device of claim 15, further comprising: a multilayerdielectric layer provided between the semiconductor pattern and thesecond stack structure.
 17. The semiconductor device of claim 16,wherein the blocking pattern passes through the multilayer dielectriclayer to contact the semiconductor pattern.
 18. The semiconductor deviceof claim 15, wherein the semiconductor pattern is a dummy pattern andprovided in a boundary between a cell region and a contact region.